Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy
arXiv:1610.05808 · doi:10.1063/1.4966634
Abstract
Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure, however, many of these compounds have been found to phase segregate. In this study, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with SQUID magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity with an activation energy of 87 meV. These results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.
arXiv commentAccepted to Appl. Phys. Lett
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Cited by in corpus (4)
- Design of L2_1-type antiferromagnetic semiconducting full-Heusler compounds: A first principles DFT+GW study
- Stability of Room Temperature Compensated Half-Metallicity in Cr-based Inverse-Heusler Compounds
- Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds
- Superconducting and Antiferromagnetic Properties of Dual-Phase VGa