Beyond conventional half-metals: gapless states and spin gapless semiconducting behavior in XMnGa (X = Ti, Ir) Heusler compounds
arXiv:2509.12803 · doi:10.5488/CMP.28.33702
Abstract
The search for high-performance spintronic materials motivates the exploration of Heusler alloys with unconventional electronic properties. Using density functional theory with Hubbard correction (DFT+, eV), we investigate XMnGa (X = Ti, Ir) alloys, which stabilize in the ferromagnetic L2-type structure with strong thermodynamic stability. Electronic structure calculations reveal contrasting behaviors: TiMnGa transitions from a metallic L2-type phase to a spin gapless semiconductor (SGS) in the XA-type, while IrMnGa exhibits gapless half-metallicity behavior in the L2-type but becomes half-metallic in the XA-type. The magnetic properties are governed by spd hybridization between Mn-3 and X-/Ga- states, which stabilizes ferromagnetism and tailors electronic states near the Fermi level. The Hubbard correction proves essential for accurately describing the correlated Mn-3 electrons. These alloys combine structural stability with tunable electronic and magnetic properties, offering a promising platform for spin-polarized transport in next-generation spintronic devices.
11 pages, 6 figures
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