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68 papers
Itinerant versus localized magnetism in spin gapped metallic half-Heusler compounds: Stoner criterion and magnetic interactions
E. Sasıoglu, W. Beida, S. Ghosh +6
Spin gapped metals have recently emerged as promising candidates for spintronic and nanoelectronic applications, enabling functionalities such as sub-60mV/dec switching, negative d…
Correlation effects in two-dimensional MX_2 and MA_2Z_4 (M= Nb, Ta; X= S, Se, Te; A=Si, Ge; Z=N, P) cold metals: Implications for device applications
W. Beida, E. Sasioglu, M. Tas +4
Cold metals, characterized by their distinctive band structures, hold promise for innovative electronic devices such as tunnel diodes with negative differential resistance (NDR) ef…
Spin gapped metals: A novel class of materials for multifunctional spintronic devices
E. Sasioglu, M. Tas, S. Ghosh +4
Gapped metals, a recently proposed class of materials, possess a band gap slightly above or below the Fermi level, behaving as intrinsic p- or n-type semiconductors without requiri…
First-principles prediction of energy band gaps in 18-valence electron semiconducting half-Heusler compounds: Exploring the role of exchange and correlation
Emel Gurbuz, Murat Tas, Ersoy Sasioglu +3
The choice of exchange functional is a critical factor in determining the energy bandgap of semiconductors. Ab initio calculations using different exchange functionals, including t…
Spin-polarized two-dimensional electron/hole gas at the interface of non-magnetic semiconducting half-Heusler compounds: Modified Slater-Pauling rule for half-metallicity at the interface
Emel Gurbuz, Sukanya Ghosh, Ersoy Sasioglu +3
Half-Heusler compounds with 18 valence electrons per unit cell are well-known non-magnetic semiconductors. Employing first-principles electronic band structure calculations, we stu…
Ab-initio calculation of the Hubbard and Hund exchange in local moment magnets: The case of Mn-based full Heusler compounds
M. Tas, E. Sasioglu, S. Blugel +2
Mn-based full Heusler compounds possess well-defined local atomic Mn moments, and thus the correlation effects between localized d electrons are expected to play an important role…