Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal

Abstract

Materials with strong magnetoresistive responses are the backbone of spintronic technology, magnetic sensors, and hard drives. Among them, manganese oxides with a mixed valence and a cubic perovskite structure stand out due to their colossal magnetoresistance (CMR). A double exchange interaction underlies the CMR in manganates, whereby charge transport is enhanced when the spins on neighboring Mn3+ and Mn4+ ions are parallel. Prior efforts to find different materials or mechanisms for CMR resulted in a much smaller effect. Here we show an enormous CMR at low temperatures in EuCd2P2 without manganese, oxygen, mixed valence, or cubic perovskite structure. EuCd2P2 has a layered trigonal lattice and exhibits antiferromagnetic ordering at 11 K. The magnitude of CMR (104 percent) in as-grown crystals of EuCd2P2 rivals the magnitude in optimized thin films of manganates. Our magnetization, transport, and synchrotron X-ray data suggest that strong magnetic fluctuations are responsible for this phenomenon. The realization of CMR at low temperatures without heterovalency leads to a new regime for materials and technologies related to antiferromagnetic spintronics.

References in corpus (4)

• Spin fluctuation induced Weyl semimetal state in the paramagnetic phase of EuCd${}_2$As${}_2$
• Electric-Field-Controlled Antiferromagnetic Spintronic Devices
• Non-sinusoidal current-phase relationship in Josephson junctions from the 3D topological insulator HgTe
• Resonant X-ray scattering study of diffuse magnetic scattering from the topological semimetals EuCd${}_2$As${}_2$ and EuCd${}_2$Sb${}_2$

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• Insulator-to-Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors
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• Incommensurate broken helix induced by nonstoichiometry in the axion insulator candidate EuIn${}_2$As${}_2$
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