Consecutive topological phase transitions and colossal magnetoresistance in a magnetic topological semimetal

Abstract

The combination of magnetic symmetries and electronic band topology provides a promising route for realizing topologically nontrivial quasiparticles, and the manipulation of magnetic structures may enable the switching between topological phases, with the potential for achieving functional physical properties. Here, we report measurements of the electrical resistivity of EuCd${}_2$As${}_2$ under pressure, which show an intriguing insulating dome at pressures between $p_{c1}\sim 1.0$~GPa and $p_{c2}\sim 2.0$~GPa, situated between two regimes with metallic transport. The insulating state can be fully suppressed by a small magnetic field, leading to a colossal negative magnetoresistance on the order of $10^5$\%, accessible via a modest field of $\sim 0.2$~T. First-principles calculations reveal that the dramatic evolution of the resistivity under pressure is due to consecutive transitions of EuCd${}_2$As${}_2$ from a magnetic topological insulator to a trivial insulator, and then to a Weyl semimetal, with the latter resulting from a pressure-induced change in the magnetic ground state. Similarly, the colossal magnetoresistance results from a field-induced polarization of the magnetic moments, transforming EuCd${}_2$As${}_2$ from a trivial insulator to a Weyl semimetal. These findings underscore weak magnetic exchange couplings and spin anisotropy as ingredients for discovering tunable magnetic topological materials with desirable functionalities.

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Cited by in corpus (14)

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• Electronic band reconstruction across the insulator-metal transition in colossal magnetoresistive EuCd2P2
• Carrier-induced transition from antiferromagnetic insulator to ferromagnetic metal in the layered phosphide EuZn${}_2$P${}_2$
• Manipulating magnetism and transport properties of EuCd${}_2$P${}_2$ with a low carrier concentration
• Origin of the exotic electronic states in antiferromagnetic NdSb
• Signature of pressure-induced topological phase transition in ZrTe${}_5$
• Revealing the EuCd_{2}As_{2} Semiconducting Band Gap via n-type La-Doping
• Recent advances in understanding and manipulating magnetic and electronic properties of Eu$M_2{X}_2$ ($M$ = Zn, Cd; $X$ = P, As)
• Spectroscopic signatures of magnetization-induced band renormalization and strong spin-charge-lattice coupling in EuZn${}_2$As${}_2$
• Incommensurate magnetic order in an axion insulator candidate EuIn${}_2$As${}_2$ investigated by NMR measurement
• Design, synthesis, and physical properties of the intergrowth compound Eu${}_2$CuZn${}_2$As${}_3$
• Engineering a Correlated Narrow-Gap Semiconductor: Effects of Ga Substitution in EuZn${}_2$P${}_2$