Voltage-controlled magnetic anisotropy in antiferromagnetic MgO-capped MnPt films

Abstract

The magnetic anisotropy in MgO-capped MnPt films and its voltage control are studied using first-principles calculations. Sharp variation of the magnetic anisotropy with film thickness, especially in the Pt-terminated film, suggests that it may be widely tuned by adjusting the film thickness. In thick films the linear voltage control coefficient is as large as 1.5 and $-0.6$ pJ/Vm for Pt-terminated and Mn-terminated interfaces, respectively. The combination of a widely tunable magnetic anisotropy energy and a large voltage-control coefficient suggest that MgO-capped MnPt films can serve as a versatile platform for magnetic memory and antiferromagnonic applications.

arXiv comment6 pages, 5 figures. This version includes significant revisions after peer review and corrects an error in the values of the VCMA coefficient, which in the original version were mistakenly given with respect to the E-field in vacuum (rather than MgO)

References in corpus (24)

• Antiferromagnetic spintronics
• Antiferromagnetic spintronics
• Electrical switching of an antiferromagnet
• Surface Magnetoelectric Effect in Ferromagnetic Metal Films
• Robust isothermal electric switching of interface magnetization: A route to voltage-controlled spintronics
• Relativistic Neel-order fields induced by electrical current in antiferromagnets
• Writing and Reading antiferromagnetic Mn${}_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance
• Finite electric field effects in the large perpendicular magnetic anisotropy surface Pt/Fe/Pt(001)
• Single-shot dynamics of spin-orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions
• Spin-orbit coupling induced anisotropy effects in bimetallic antiferromagnets: A route towards antiferromagnetic spintronics
• Electric-Field-Controlled Antiferromagnetic Spintronic Devices
• Elucidating the Voltage Controlled Magnetic Anisotropy
• Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film
• Constituents of magnetic anisotropy and a screening of spin-orbit coupling in solids
• Antiferromagnetic Piezospintronics
• Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism
• Voltage-Controlled Nano-Scale Reconfigurable Magnonic Crystal
• Parametric resonance of magnetization excited by electric field
• Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures
• Electric-field control of domain wall nucleation and pinning in a metallic ferromagnet
• Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching
• Voltage-Gated Modulation of Domain Wall Velocity in an Ultrathin Metallic Ferromagnet
• Magnetocrystalline anisotropy energy of Fe$(001)$, Fe$(110)$ slabs and nanoclusters: a detailed local analysis within a tight-binding model
• Origin of spin reorientation transitions in antiferromagnetic MnPt-based alloys

Cited by in corpus (6)

• Roadmap on Spin-Wave Computing
• Magnetic anisotropy of L1${}_0$ FeNi (001), (010), and (111) ultrathin films: A first-principles study
• L1${}_0$ FePt thin films with tilted and in-plane magnetic anisotropy: first-principles study
• Ultra-sensitive voltage-controlled skyrmion-based spintronic diode
• Ferroelectric control of Néel vector in L10 type of antiferromagnetic films
• Four-fold Anisotropic Magnetoresistance in Antiferromagnetic Epitaxial Thin Films of MnPt${}_x$Pd${}_{1-x}$