Voltage-controlled magnetic anisotropy in antiferromagnetic MgO-capped MnPt films

Abstract

The magnetic anisotropy in MgO-capped MnPt films and its voltage control are studied using first-principles calculations. Sharp variation of the magnetic anisotropy with film thickness, especially in the Pt-terminated film, suggests that it may be widely tuned by adjusting the film thickness. In thick films the linear voltage control coefficient is as large as 1.5 and $-0.6$ pJ/Vm for Pt-terminated and Mn-terminated interfaces, respectively. The combination of a widely tunable magnetic anisotropy energy and a large voltage-control coefficient suggest that MgO-capped MnPt films can serve as a versatile platform for magnetic memory and antiferromagnonic applications.

6 pages, 5 figures. This version includes significant revisions after peer review and corrects an error in the values of the VCMA coefficient, which in the original version were mistakenly given with respect to the E-field in vacuum (rather than MgO)

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• Four-fold Anisotropic Magnetoresistance in Antiferromagnetic Epitaxial Thin Films of MnPt${}_x$Pd${}_{1-x}$