Electrochemical ferroelectric switching: The origin of polarization reversal in ultrathin films
arXiv:1108.2208 · doi:10.1103/PhysRevB.85.024106
Abstract
Against expectations, robust switchable ferroelectricity has been recently observed in ultrathin (1 nm) ferroelectric films exposed to air [V. Garcia , Nature {\bf 460}, 81 (2009)]. Based on first-principles calculations, we show that the system does not polarize unless charged defects or adsorbates form at the surface. We propose electrochemical processes as the most likely origin of this charge. The ferroelectric polarization of the film adapts to the bound charge generated on its surface by redox processes when poling the film. This, in turn, alters the band alignment at the bottom electrode interface, explaining the observed tunneling electroresistance. Our conclusions are supported by energetics calculated for varied electrochemical scenarios.
Updated, 7 pages
References in corpus (8)
- Theoretical current-voltage characteristics of ferroelectric tunnel junctions
- Origin of the magnetoelectric coupling effect in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 multiferroic heterostructures
- "Water-cycle" mechanism for writing and erasing nanostructures at the LaAlO3/SrTiO3 interface
- Surface defects and conduction in polar oxide heterostructures
- Band alignment at metal/ferroelectric interfaces: insights and artifacts from first principles
- Equilibrium and Stability of Polarization in Ultrathin Ferroelectric Films with Ionic Surface Compensation
- Electrostatic stability of insulating surfaces: Theory and applications
- Ferrodistortive instability at the (001) surface of half-metallic manganites
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