Voltage-controlled antiferromagnetism in magnetic tunnel junctions

Abstract

We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly-magnetized CoFeB allows sensitive detection of the exchange bias. It is found that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.

References in corpus (11)

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• Antiferromagnetic spintronics
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Cited by in corpus (7)

• Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO
• Perpendicular magnetic tunnel junctions with multi-interface free layer
• Gate-tunable Exchange Bias and Voltage-controlled Magnetization Switching in a van der Waals Ferromagnet
• Electrical-controllable antiferromagnet-based tunnel junction
• Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier
• A Magnetoelectric Memory Device Based on Pseudo-Magnetization
• Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl