55 citations · 121 across the 8 of their papers we have counts for
9 papers
Experimental demonstration of magnetic tunnel junction-based computational random-access memory
Yang Lv, Brandon R. Zink, Robert P. Bloom +9
Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power an…
Hardware in Loop Learning with Spin Stochastic Neurons
A N M Nafiul Islam, Kezhou Yang, Amit K. Shukla +4
Despite the promise of superior efficiency and scalability, real-world deployment of emerging nanoelectronic platforms for brain-inspired computing have been limited thus far, prim…
Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl
Ali Habiboglu, Yash Chandak, Pravin Khanal +7
Heusler alloys based magnetic tunnel junctions can potentially provide high magnetoresistance, small damping and fast switching. Here junctions with Co2FeAl as a ferromagnetic elec…
Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions
Pravin Khanal, Bowei Zhou, Hamid Almasi +7
The interfacial oxidation level and thermodynamic properties of the MgO-based perpendicular magnetic tunneling junctions are investigated. The symmetry-conserved tunneling effect d…
Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers
Bowei Zhou, Pravin Khanal, Onri Jay Benally +7
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting p…
Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier
Pravin Khanal, Bowei Zhou, Magda Andrade +6
Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic an…
Perpendicular magnetic tunnel junctions with multi-interface free layer
Pravin Khanal, Bowei Zhou, Magda Andrade +8
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy…
Voltage-controlled antiferromagnetism in magnetic tunnel junctions
Meng Xu, Mingen Li, Pravin Khanal +11
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrode…
Kondo physics in antiferromagnetic Weyl semimetal Mn3+xSn1-x films
Durga Khadka, T. R. Thapaliya, Sebastian Hurtado Parra +9
Topology and strong electron correlations are crucial ingredients in emerging quantum materials, yet their intersection in experimental systems has been relatively limited to date.…