Perpendicular magnetic tunnel junctions with multi-interface free layer
arXiv:2201.03798 · doi:10.1063/5.0066782
Abstract
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular magnetic tunnel junctions with composite free layers where multiple ferromagnet/nonmagnet interfaces can contribute to the thermal stability. Different nonmagnetic materials (MgO, Ta, Mo) have been employed as the coupling layers in these multi-interface free layers. The evolution of junction properties under different annealing conditions is investigated. A strong dependence of tunneling magnetoresistance on the thickness of the first CoFeB layer has been observed. In junctions where Mo and MgO are used as coupling layers, large tunneling magnetoresistance above 200% has been achieved after 400°C annealing.
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Cited by in corpus (3)
- Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier
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- Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl