activity
20112026
most citedLarge magneto-optical Kerr effect and imaging of magnetic octupole domains in an antiferromagnetic metal

429 citations · 517 across the 14 of their papers we have counts for

collaborators

15 papers

cond-mat.mtrl-sci2026

Interfacial exchange and magnetostatic coupling in a CoFeB/Thulium Iron Garnet heterostructure

Walid Al Misba, Jenae E. Shoup, Miela J. Gross +5

We investigate the exchange coupling between a ferrimagnetic insulator (FI) thulium iron garnet (TmIG) deposited on a gadolinium gallium garnet (GGG) substrate, which shows perpend…

cond-mat.mes-hall2025

Interface-engineered voltage-driven magnetic tunnel junctions with ultra-low-energy magnetization switching

Yu Zhang, Meng Xu, Bowei Zhou +9

Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs)…

cond-mat.mtrl-sci2025

Strain Mediated Voltage Control of Magnetic Anisotropy and Magnetization Reversal in Bismuth Substituted Yttrium Iron Garnet Films and Meso-structures

Walid Al Misba, Miela Josephine Gross, Kensuke Hayashi +3

We report on magnetic anisotropy modulation in Bismuth substituted Yttrium Iron Garnet (Bi-YIG) thin films and mesoscale patterned structures deposited on a PMN-PT substrate with t…

physics.app-ph2022★ 1 cited

Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers

Bowei Zhou, Pravin Khanal, Onri Jay Benally +7

Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting p…

cond-mat.mtrl-sci2022★ 21 cited

Perpendicular magnetic tunnel junctions with multi-interface free layer

Pravin Khanal, Bowei Zhou, Magda Andrade +8

Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy…

cond-mat.mtrl-sci2018★ 429 cited

Large magneto-optical Kerr effect and imaging of magnetic octupole domains in an antiferromagnetic metal

Tomoya Higo, Huiyuan Man, Daniel B. Gopman +14

When a polarized light beam is incident upon the surface of a magnetic material, the reflected light undergoes a polarization rotation. This magneto-optical Kerr effect (MOKE) has…

physics.comp-ph2016

The Polar Nano Regions Relaxor Transition in ; = bulk concentration of nearest neighbor [Pb-O] divacancies

B. P. Burton, Eric Cockayne, D. B. Gopman +2

In previous work, molecular dynamics simulations based on a first-principles-derived effective Hamiltonian for ~ (PSN), with nearest-neighbor Pb-…

cond-mat.mes-hall2016

Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy

Daniel B. Gopman, Cindi L. Dennis, Andrew P. Chen +4

Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low pow…

cond-mat.mes-hall2013★ 13 cited

Spin-transfer assisted thermally activated switching distributions in perpendicularly magnetized spin valve nanopillars

D. B. Gopman, D. Bedau, S. Mangin +3

We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature.…

cond-mat.mes-hall2013★ 6 cited

Temperature dependent nucleation and propagation of domain walls in a sub-100 nm perpendicularly magnetized Co/Ni multilayer

D. B. Gopman, D. Bedau, S. Mangin +3

We present a study of the temperature dependence of the switching fields in Co/Ni-based perpendicularly magnetized spin-valves. While magnetization reversal of all-perpendicular Co…

cond-mat.mes-hall2013★ 6 cited

Bimodal switching field distributions in all-perpendicular spin-valve nanopillars

Daniel B. Gopman, Daniel Bedau, Stéphane Mangin +3

Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K).…

cond-mat.mes-hall2013★ 12 cited

Temperature dependence of the switching field distributions in all-perpendicular spin-valve nanopillars

D. B. Gopman, D. Bedau, G. Wolf +4

We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75 nm diameter spin-valve nanopillars. Angular dependent hysteresis measurements a…

physics.ins-det2012

FLUXCAP: A flux-coupled ac/dc magnetizing device

Daniel B. Gopman, Huanlong Liu, Andrew D. Kent

We report on an instrument for applying ac and dc magnetic fields by capturing the flux from a rotating permanent magnet and projecting it between two adjustable pole pieces. This…

physics.ins-det2012★ 3 cited

Audio Cards for High-Resolution and Economical Electronic Transport Studies

Daniel B. Gopman, Daniel Bedau, Andrew D. Kent

We report on a technique for determining electronic transport properties using commercially available audio cards. Using a typical 24-bit audio card simultaneously as a sine wave g…

cond-mat.mes-hall2011★ 26 cited

Asymmetric switching behavior in perpendicularly magnetized spin-valve nanopillars due to the polarizer dipole field

Daniel B. Gopman, Daniel Bedau, Stephane Mangin +4

We report the free layer switching field distributions of spin-valve nanopillars with perpendicular magnetization. While the distributions are consistent with a thermal activation…