429 citations · 517 across the 14 of their papers we have counts for
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Interface-engineered voltage-driven magnetic tunnel junctions with ultra-low-energy magnetization switching
Yu Zhang, Meng Xu, Bowei Zhou +9
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs)…
Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy
Daniel B. Gopman, Cindi L. Dennis, Andrew P. Chen +4
Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low pow…
Spin-transfer assisted thermally activated switching distributions in perpendicularly magnetized spin valve nanopillars
D. B. Gopman, D. Bedau, S. Mangin +3
We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature.…
Temperature dependent nucleation and propagation of domain walls in a sub-100 nm perpendicularly magnetized Co/Ni multilayer
D. B. Gopman, D. Bedau, S. Mangin +3
We present a study of the temperature dependence of the switching fields in Co/Ni-based perpendicularly magnetized spin-valves. While magnetization reversal of all-perpendicular Co…
Bimodal switching field distributions in all-perpendicular spin-valve nanopillars
Daniel B. Gopman, Daniel Bedau, Stéphane Mangin +3
Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K).…
Temperature dependence of the switching field distributions in all-perpendicular spin-valve nanopillars
D. B. Gopman, D. Bedau, G. Wolf +4
We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75 nm diameter spin-valve nanopillars. Angular dependent hysteresis measurements a…
Asymmetric switching behavior in perpendicularly magnetized spin-valve nanopillars due to the polarizer dipole field
Daniel B. Gopman, Daniel Bedau, Stephane Mangin +4
We report the free layer switching field distributions of spin-valve nanopillars with perpendicular magnetization. While the distributions are consistent with a thermal activation…