Strongly coupled phase transition in ferroelectric/correlated electron oxide heterostructures

Abstract

We fabricated ultrathin ferroelectric/correlated electron oxide heterostructures composed of the ferroelectric Pb(Zr0.2Ti0.8)O3 and the correlated electron oxide (CEO) La0.8Sr0.2MnO3 on SrTiO3 substrates by pulsed laser epitaxy. The hole accumulation in the ultrathin CEO layer was substantially modified by heterostructuring with the ferroelectric layer, resulting in an insulator-metal transition. In particular, our thickness dependent study showed that drastic changes in transport and magnetic properties were strongly coupled to the modulation of charge carriers by ferroelectric field effect, which was confined to the vicinity of the interface. Thus, our results provide crucial evidence that strong ferroelectric field effect control can be achieved in ultrathin (10 nm) heterostructures, yielding at least a 100,000-fold change in resistivity.

References in corpus (5)

• Critical thickness and orbital ordering in ultrathin La0.7Sr0.3MnO3 films
• Thickness dependent magnetotransport in ultra-thin manganite films
• Suppressed dependence of polarization on epitaxial strain in highly polar ferroelectrics
• Microscopic model for the ferroelectric field effect in oxide heterostructures
• Charge states and magnetic ordering in LaMnO3/SrTiO3 superlattices

Cited by in corpus (9)

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• Tunneling Electroresistance Induced by Interfacial Phase Transitions in Ultrathin Oxide Heterostructures
• Full Control of Magnetism in Manganite Bilayer by Ferroelectric Polarization
• Enhancing interfacial magnetization with a ferroelectric
• Strain driven anisotropic magnetoresistance in antiferromagnetic La${}_{0.4}$Sr${}_{0.6}$MnO${}_3$
• Nonvolatile Multilevel States in Multiferroic Tunnel Junctions
• Ferroelectric Control of Magnetism and Transport in Oxide Heterostructures
• Magnetoelectric phase control at domain-wall-like epitaxial oxide multilayers