A Thermodynamic Perspective of Negative-capacitance Field-effect-transistors
arXiv:1706.05464 · doi:10.1109/JXCDC.2017.2750108
Abstract
Physical phenomena underlying operation of ferroelectric field-effect transistors (FeFETs) is treated within a unified simulation framework. The framework incorporates the Landau mean-field treatment of free energy of a ferroelectric and the polarization dynamics according to Landau-Khalatnikov (LK) equation. These equations are self-consistently solved with the one-dimensional metal-oxide-semiconductor (MOS) structure electrostatics and the drift-diffusion solution for the current in the semiconductor channel. Numerical simulations demonstrate, depending on the ferroelectric (FE) thickness, both regimes of hysteresis switching (relevant for a non-volatile memory) and of higher on-currents and steeper subthreshold slope (SS) with a negligible hysteresis (relevant for logic) via the negative capacitance effect.
8 pages, 14 figures
References in corpus (4)
Cited by in corpus (8)
- Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor
- On the Validity and Applicability of Models of Negative Capacitance and Implications for MOS Applications
- Multi-domain Characterization of Ferroelectric Switching Dynamics with a Physics-based SPICE Circuit Model for Phase Field Simulations
- Inversion Charge-boost and Transient Steep-slope induced by Free charge-polarization Mismatch in a Ferroelectric-metal-oxide-semiconductor Capacitor
- Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges
- Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors
- A critical analysis of models and experimental evidence of negative capacitance stabilization in a ferroelectric by capacitance matching to an adjacent dielectric layer
- Comment on "Unveiling the double-well energy landscape in a ferroelectric layer"