92 citations · 215 across the 9 of their papers we have counts for
10 papers
Access Rate-Dependent Endurance Behavior of Ferroelectric Hafnium Zirconium Oxide Capacitors
Roberto Guido, Julie Laguerre, Pramoda Vishnumurthy +6
Fluorite-structured ferroelectrics, such as hafnium zirconium oxide (), are among the most promising materials for developing the next generation of low-power…
Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges
Chia-Sheng Hsu, Sou-Chi Chang, Dmitri E. Nikonov +2
The negative capacitance (NC) stabilization of a ferroelectric (FE) material can potentially provide an alternative way to further reduce the power consumption in ultra-scaled devi…
A micromagnetic study of the switching dynamics of the BiFeO/CoFe heterojunction
Yu-Ching Liao, Dmitri E. Nikonov, Sourav Dutta +4
The switching dynamics of a single-domain BiFeO3/CoFe heterojunction is modeled and key parameters such as interface exchange coupling coefficient are extracted from experimental r…
Multi-domain Characterization of Ferroelectric Switching Dynamics with a Physics-based SPICE Circuit Model for Phase Field Simulations
Chia-Sheng Hsu, Sou-Chi Chang, Dmitri E. Nikonov +2
In this paper, the multi-domain nature of ferroelectric (FE) polarization switching dynamics in a metal-ferroelectric-metal (MFM) capacitor is explored through a physics-based phas…
Simulation of the Magnetization Dynamics of a Single Domain BiFeO Thin Film
Yu-Ching Liao, Dmitri E. Nikonov, Sourav Dutta +4
The switching dynamics of a single-domain BiFeO thin films is investigated through combining the dynamics of polarization and Neel vector. The evolution of the ferroelectric po…
Inversion Charge-boost and Transient Steep-slope induced by Free charge-polarization Mismatch in a Ferroelectric-metal-oxide-semiconductor Capacitor
Sou-Chi Chang, Uygar E. Avci, Dmitri E. Nikonov +1
In this letter, the transient behavior of a ferroelectric (FE) metal-oxide-semiconductor (MOS) capacitor is theoretically investigated with a series resistor. It is shown that comp…
Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor
Sou-Chi Chang, Uygar E. Avci, Dmitri E. Nikonov +2
Transient negative differential capacitance (NC), the dynamic reversal of transient capacitance in an electrical circuit is of highly technological and scientific interest since it…
A Thermodynamic Perspective of Negative-capacitance Field-effect-transistors
Sou-Chi Chang, Uygar E. Avci, Dmitri. E. Nikonov +1
Physical phenomena underlying operation of ferroelectric field-effect transistors (FeFETs) is treated within a unified simulation framework. The framework incorporates the Landau m…
Low-power Spin Valve Logic using Spin-transfer Torque with Automotion of Domain Walls
Sou-Chi Chang, Sasikanth Manipatruni, Dmitri E. Nikonov +2
A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is compo…
Theoretical Approach to Electroresistance in Ferroelectric Tunnel Junctions
Sou-Chi Chang, Azad Naeemi, Dmitri E. Nikonov +1
In this paper, a theoretical approach, comprising the non-equilibrium Green's function method for electronic transport and Landau-Khalatnikov equation for electric polarization dyn…