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Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges
Chia-Sheng Hsu, Sou-Chi Chang, Dmitri E. Nikonov +2
The negative capacitance (NC) stabilization of a ferroelectric (FE) material can potentially provide an alternative way to further reduce the power consumption in ultra-scaled devi…
Multi-domain Characterization of Ferroelectric Switching Dynamics with a Physics-based SPICE Circuit Model for Phase Field Simulations
Chia-Sheng Hsu, Sou-Chi Chang, Dmitri E. Nikonov +2
In this paper, the multi-domain nature of ferroelectric (FE) polarization switching dynamics in a metal-ferroelectric-metal (MFM) capacitor is explored through a physics-based phas…
Inversion Charge-boost and Transient Steep-slope induced by Free charge-polarization Mismatch in a Ferroelectric-metal-oxide-semiconductor Capacitor
Sou-Chi Chang, Uygar E. Avci, Dmitri E. Nikonov +1
In this letter, the transient behavior of a ferroelectric (FE) metal-oxide-semiconductor (MOS) capacitor is theoretically investigated with a series resistor. It is shown that comp…
Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor
Sou-Chi Chang, Uygar E. Avci, Dmitri E. Nikonov +2
Transient negative differential capacitance (NC), the dynamic reversal of transient capacitance in an electrical circuit is of highly technological and scientific interest since it…
A Thermodynamic Perspective of Negative-capacitance Field-effect-transistors
Sou-Chi Chang, Uygar E. Avci, Dmitri. E. Nikonov +1
Physical phenomena underlying operation of ferroelectric field-effect transistors (FeFETs) is treated within a unified simulation framework. The framework incorporates the Landau m…