activity
20122019
most citedThickness-dependent polarization of strained BiFeO3 films with constant tetragonality

71 citations · 200 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2019

Ultra-low magnetic damping in Co 2 Mn-based Heusler compounds: promising materials for spintronic

C Guillemard, S. Petit-Watelot, L. Pasquier +8

The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underl…

cond-mat.mtrl-sci2018

Characterization of free standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

G. Conti, S. Nemšák, C. -T. Kuo +13

Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS),…

cond-mat.mtrl-sci201741 cited

Depth profiling charge accumulation from a ferroelectric into a doped Mott insulator

M. Marinova, J. E. Rault, A. Gloter +13

The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxid…

cond-mat.mtrl-sci201739 cited

The structure and evolution of semiconducting buffer graphene grown on SiC(0001)

M. Conrad, J. Rault, Y. Utsumi +6

Using highly controlled coverages of graphene on SiC(0001), we have studied the structure of the first graphene layer that grows on the SiC interface. This layer, known as the buff…

cond-mat.mtrl-sci201349 cited

Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias

J. E. Rault, G. Agnus, T. Maroutian +8

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The…

cond-mat.mtrl-sci201271 cited

Thickness-dependent polarization of strained BiFeO3 films with constant tetragonality

J. E. Rault, W. Ren, S. Prosandeev +7

We measure the remnant polarization of ferroelectric domains in BiFeO3 films down to 3.6 nm using low energy electron and photoelectron emission microscopy. The measured polarizati…