Temperature-driven modification of surface electronic structure on bismuth, a topological border material

Abstract

Single crystalline bismuth (Bi) is known to have a peculiar electronic structure which is very close to the topological phase transition. The modification of the surface states of Bi depending on the temperature are revealed by angle-resolved photoelectron spectroscopy (ARPES). At low temperature, the upper branch of the surface state merged to the projected bulk conduction bands around the $\bar{M}$ point of the surface Brillouin zone (SBZ). In contrast, the same branch merged to the projected bulk valence bands at high temperature (400 K). Such behavior could be interpreted as a topological phase transition driven by the temperature, which might be applicable for future spin-thermoelectric devices. We discuss the possible mechanisms to cause such transition, such as the thermal lattice distortion and electron-phonon coupling.

15 pages with 6 figures (single column)

References in corpus (21)

• Topological Insulators
• Topological Insulators with Inversion Symmetry
• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
• New Perspectives for Rashba Spin-Orbit Coupling
• Surface States of the Topological Insulator Bi_{1-x}Sb_x
• Topological Phase Transition and Texture Inversion in a Tunable Topological Insulator
• Hedgehog Spin-texture and Berry's Phase tuning in a Magnetic Topological Insulator
• Anomalous Hall Effect in ZrTe5
• Unexpected mass acquisition of Dirac fermions at the quantum phase transition of a topological insulator
• Quantum Materials for Spin and Charge Conversion
• Large-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer
• Temperature-driven Topological Phase Transition and Intermediate Dirac Semimetal Phase in ZrTe${}_5$
• Electronic phase transitions of bismuth under strain from relativistic self-consistent GW calculations
• Phonon-induced topological transitions and crossovers in Dirac materials
• Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement
• 3D nature of ZrTe${}_5$ band structure measured by high-momentum-resolution photoemission spectroscopy
• Non-trivial Surface-band Dispersion on Bi(111)
• Direct observation and temperature control of the surface Dirac gap in the topological crystalline insulator (Pb,Sn)Se
• Surface band structure of ${\text{Bi}}_{1-x}{\text{Sb}}_x$(111)
• Topological surface states on Bi(111) based on empirical tight-binding calculations

Cited by in corpus (3)

• Resolving the Topological Classification of Bismuth with Topological Defects
• Unconventional topological phase transition from semimetal to insulator in SnBi2Te4: Role of anomalous thermal expansion
• Topological blocking at the Bi(111) surface due to surface relaxation