Surface band structure of ${\text{Bi}}_{1-x}{\text{Sb}}_x$(111)

Abstract

Theoretical and experimental studies agree that ${\text{Bi}}_{1-x}{\text{Sb}}_x$ ($0.07\le x\le 0.21$) to be a three-dimensional topological insulator. However, there is still a debate on the corresponding ${\text{Bi}}_{1-x}{\text{Sb}}_x$(111) surface band structure. While three spin polarized bands have been claimed experimentally, theoretically, only two surface bands appear, with the third band being attributed to surface imperfections. Here, we address this controversy using angle-resolved photoemission spectroscopy (ARPES) on ${\text{Bi}}_{1-x}{\text{Sb}}_x$ films. To minimize surface imperfections, we have optimized the sample growth recipe. We have measured the evolution of the surface band structure of ${\text{Bi}}_{1-x}{\text{Sb}}_x$ with $x$ increasing gradually from $x=0$ to $x=0.6$. Our ARPES data show better agreement with the theoretical calculations, where the system is topologically non-trivial with two surface bands.

References in corpus (12)

• Topological Insulators
• Topological Insulators in Three Dimensions
• A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
• First direct observation of Spin-textures in Topological Insulators : Spin-resolved ARPES as a probe of topological quantum spin Hall effect and Berry's phase
• Surface States of the Topological Insulator Bi_{1-x}Sb_x
• Strong spin-orbit splitting on Bi surfaces
• Direct mapping of the spin-filtered surface bands of a three-dimensional quantum spin Hall insulator
• Fermi Surface and Anisotropic Spin-Orbit Coupling of Sb(111) studied by Angle-Resolved Photoemission Spectroscopy
• Electronic Structures and Surface States of Topological Insulator Bi${}_{1-x}$Sb${}_x$
• Non-trivial Surface-band Dispersion on Bi(111)
• Phase Diagrams of Bi1-xSbx Thin Films with Different Growth Orientations
• Topological surface states on Bi${}_{1-x}$Sb${}_x$: Dependence on surface orientation, surface termination and stability

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