Theory of spin and orbital charge conversion at the surface states of Bi_{1-x}Sb_x topological insulator
arXiv:2407.03120 · doi:10.1103/PhysRevResearch.6.043332
Abstract
Topological insulators are quantum materials involving Time-reversal protected surface states(TSS) making them appealing candidates for the design of next generation of highly efficient spintronic devices. The very recent observation of large transient spin-charge conversion (SCC) and subsequent powerful THz emission from Co|Bi_{1-x}Sb_x bilayers clearly demonstrates such potentiality and feasibility for the near future. Amongst the exotic properties appearing in and at the surface of such quantum materials, spin-momentum locking (SML) and Rashba-Edelstein effects remain as key ingredients to effectively convert the spin degree of freedom into a charge or a voltage signal. In this work, we extend our analyses to the quantification of orbital momentum-locking and related orbital charge conversion effects in Bi_{0.85}Sb_{0.15} via orbital Rashba-Edelstein effects. In that sense, we will provide some clear theoretical and numerical insights implemented by multi-orbital and multi-layered tight-binding methods (TB) to clarify our recent experimental results obtained by THz-TDS spectroscopy.
Enhanced text clarifying additional concepts absent in the previous version
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Cited by in corpus (4)
- Orbital Pumping in Ferrimagnetic Insulators
- Anatomy of torques from orbital Rashba textures: the case of Co/Al interfaces
- Spin and Orbital Rashba response in ferroelectric polarized PtSe/MoSe/LiNbO heterostructures
- Orbital Hall effect in spin-3/2 hole-doped semiconductors and its implications for orbitronics