Disorder effects of vacancies on the electronic transport properties of realistic topological insulators nanoribbons: the case of bismuthene

Abstract

The robustness of topological materials against disorder and defects is presumed but has not been demonstrated explicitly in realistic systems. In this work, we use state-of-the-art density functional theory and recursive nonequilibrium Green's functions methods to study the effect of disorder in the electronic transport of long nanoribbons, up to 157 nm, as a function of vacancy concentration. In narrow nanoribbons, even for small vacancy concentrations, defect-like localized states give rise to hybridization between the edge states erasing topological protection and enabling backscattering events. We show that the topological protection is more robust for wide nanoribbons, but surprisingly it breaks down at moderate structural disorder. Our study helps to establish some bounds on defective bismuthene nanoribbons as promising candidates for spintronic applications.

References in corpus (16)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Emergence of magnetism in graphene materials and nanostructures
• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Finite size effects of helical edge states in HgTe/CdTe quantum wells
• Vacancy induced magnetism in graphene and graphene ribbons
• First Principles Studies on 3-Dimentional Strong Topological Insulators: Bi2Te3, Bi2Se3 and Sb2Te3
• One-dimensional Topological Edge States of Bismuth Bilayers
• Perfectly Conducting Channel and Universality Crossover in Disordered Nano-Graphene Ribbons
• The 2021 Quantum Materials Roadmap
• Toward Realistic Amorphous Topological Insulators
• Modification of electronic, magnetic structure and topological phase of bismuthene by point defects
• Electronic transport in disordered MoS${}_2$ nanoribbons
• Structural and electronic properties of realistic two-dimensional amorphous topological insulators
• The role of the disorder range and electronic energy in the graphene nanoribbons perfect transmission
• Electronic transport properties of MoS${}_2$ nanoribbons embedded on butadiene solvent

Cited by in corpus (12)

• Machine learning for materials discovery: two-dimensional topological insulators
• Structural and electronic properties of realistic two-dimensional amorphous topological insulators
• Ultrafast Momentum-resolved Hot Electron Dynamics in the Two-dimensional Topological Insulator Bismuthene
• Breakdown of topological protection due to non-magnetic edge disorder in two-dimensional materials in the Quantum Spin Hall phase
• At the verge of topology: vacancy-driven quantum spin Hall in trivial insulators
• Squashed entanglement in one-dimensional quantum matter
• Theory of spin and orbital charge conversion at the surface states of Bi_{1-x}Sb_x topological insulator
• Substrate suppression of oxidation process in pnictogen monolayers
• Hard wall edge confinement in 2D topological insulators and the energy of the Dirac Point
• Resonant helical multi-edge transport in Sierpiński carpets
• Topological squashed entanglement: nonlocal order parameter for one-dimensional topological superconductors
• Tunable Topological Phases in Quantum Kirigamis