Dual Topological Insulator Device with Disorder Robustness

Abstract

Two-dimensional Na${}_3$Bi is a dual topological insulator protected by time-reversal and mirror symmetry, resulting in a promising platform for devices design. However, in reality, the design of topological devices is hindered by a sensitivity against disorder and temperature. We study the topological properties of Na${}_3$Bi in the presence of intrinsic defects, investigating the robustness of the edge states and the resulting transport properties. We apply a recursive Green's function technique enabling the study of disordered systems with lengths comparable to experimentally synthesized materials, in the order of micrometers. We combine our findings to propose a topological insulator device, where intrinsic defects are used to filter the response of trivial bulk states. This results in a stable conductance throughout a large range of electronic temperatures, and controllable by a perpendicular electric field. Our proposal is general, enabling the design of various dual topological insulators devices.

References in corpus (44)

• Topological Insulators
• Topological insulators and superconductors
• The SIESTA method for ab initio order-N materials simulation
• Efficient index handling of multidimensional periodic boundary conditions
• Quantum Spin Hall Effect in Graphene
• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• $Z_2$ Topological Order and the Quantum Spin Hall Effect
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Density functional method for nonequilibrium electron transport
• Discovery of a Three-dimensional Topological Dirac Semimetal, Na3Bi
• Topological Crystalline Insulators
• Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides
• Quantized Electric Multipole Insulators
• Topological Insulator Materials
• Higher-Order Topological Insulators
• Colloquium: Topological Band Theory
• Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm
• Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
• Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
• First-Principles Based Matrix-Green's Function Approach to Molecular Electronic Devices: General Formalism
• Surface States of the Topological Insulator Bi_{1-x}Sb_x
• Topological Crystalline Insulators and Topological Superconductors: From Concepts to Materials
• Computing topological invariants without inversion symmetry
• Floquet topological insulators
• Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus
• Z2Pack: Numerical Implementation of Hybrid Wannier Centers for Identifying Topological Materials
• General Green's function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers
• Topological unification of time-reversal and particle-hole symmetries in non-Hermitian physics
• The recursive Green's function method for graphene
• Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor
• Electronic transport in Si nanowires: Role of bulk and surface disorder
• $\mbox{Bi}_{1}\mbox{Te}_{1}$: a dual topological insulator
• Abundance of ${\mathbb{Z}}_2$ topological order in exfoliable two-dimensional insulators
• Discovering new two-dimensional topological insulators from computational screening
• Magnetic anisotropies of late transition metal atomic clusters
• Toward Realistic Amorphous Topological Insulators
• Bulk-edge correspondence for Chern topological phases: A viewpoint from a generalized index theorem
• Robust Dual Topological Character with Spin-Valley Polarization in a Monolayer of the Dirac Semimetal Na${}_3$Bi
• Disorder-based graphene spintronics
• Spin-polarization control driven by a Rashba-type effect breaking the mirror symmetry in two-dimensional dual topological insulators
• Gapped Surface States in a Strong-Topological-Semimetal
• Conductance of quantum spin Hall edge states from first principles: the critical role of magnetic impurities and inter-edge scattering
• Electronic transport properties of MoS${}_2$ nanoribbons embedded on butadiene solvent
• Spin-filtering and Disorder Induced Giant Magnetoresistance in Carbon Nanotubes: Ab Initio Calculations

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• Strained topological insulator spin field effect transistor
• Duality and higher Buscher rules in p-form gauge theory and linearized gravity
• Dual topological insulator with mirror symmetry protected helical edge states