Structural and electronic properties of realistic two-dimensional amorphous topological insulators

Abstract

We investigate the structure and electronic spectra properties of two-dimensional amorphous bismuthene structures and show that these systems are topological insulators. We employ realistic modeling of amorphous geometries together with density functional theory for electronic structure calculations. We investigate the system topological properties throughout the amorphization process and find that the robustness of the topological phase is associated with the spin-orbit coupling strength and size of the pristine topological gap. Using recursive non-equilibrium Green's function, we study the electronic transport properties of nanoribbons devices with lengths comparable to experimentally synthesized materials. We find a $2e^2/h$ conductance plateau within the topological gap and an onset of Anderson localization at the trivial insulator phase.

References in corpus (13)

• Topological Insulators with Inversion Symmetry
• Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
• Computing topological invariants without inversion symmetry
• SIESTA: recent developments and applications
• Synthesis and properties of free-standing monolayer amorphous carbon
• Z2Pack: Numerical Implementation of Hybrid Wannier Centers for Identifying Topological Materials
• The 2021 Quantum Materials Roadmap
• Real-space calculation of the conductivity tensor for disordered topological matter
• Electronic transport in Si nanowires: Role of bulk and surface disorder
• Magnetic anisotropies of late transition metal atomic clusters
• Toward Realistic Amorphous Topological Insulators
• Insulating Behavior of an Amorphous Graphene Membrane
• Photonic Chern insulator through homogenization of an array of particles

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