Amorphous BiSe structural, electronic, and topological nature by first-principles
arXiv:2109.10858 · doi:10.1103/PhysRevB.104.214206
Abstract
Crystalline is one of the most explored three-dimensional topological insulator, with a energy gap making it promising for applications. Its amorphous counterpart could bring to light new possibilities for large scale synthesis and applications. Using ab initio molecular dynamics simulations, we have studied realistic amorphous phases generated by different processes of melting, quenching, and annealing. Extensive structural and electronic characterizations show that the melting process induces an energy gap decrease ruled by growth of the defective local environments. This behavior dictates a weak stability of the topological phase to disorder, characterized by the spin Bott index. Interestingly, we identify the occurrence of topologically trivial surface states in amorphous that show a strong resemblance with standard helical topological states. Our results and methods advance the search of topological phases in three-dimensional amorphous solids.
References in corpus (16)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- Surface States of the Topological Insulator Bi_{1-x}Sb_x
- Quantum Spin Hall Effect and Topologically Invariant Chern Numbers
- Coexistence of tetrahedral and octahedral-like sites in amorphous phase change materials
- Robustness of the Spin-Chern number
- The 2021 Quantum Materials Roadmap
- Temperature effects in the band structure of topological insulators
- Toward Realistic Amorphous Topological Insulators
- Fingerprints of Inelastic Transport at the Surface of the Topological Insulator Bi2Se3: Role of Electron-Phonon Coupling
- Temperature-induced topological phase transitions: promoted vs. suppressed non-trivial topology
- Structural and electronic properties of realistic two-dimensional amorphous topological insulators
- Topological Insulator Thin Films Starting from the Amorphous Phase - BiSe as Example
- An ab initio investigation of BiSe topological insulator deposited on amorphous SiO
Cited by in corpus (17)
- Universal topological marker
- Amorphous topological matter: theory and experiment
- Higher-order topological phases in crystalline and non-crystalline systems: a review
- Local Topological Markers in Odd Spatial Dimensions and Their Application to Amorphous Topological Matter
- Fractionalization and topology in amorphous electronic solids
- Topological Random Fractals
- Topological Anderson amorphous insulator
- Topological marker approach to an interacting Su-Schrieffer-Heeger model
- Robustness of topological order against disorder
- Vacancy localization effects on MX2 transition metal dichalcogenides: a systematic ab-initio study
- Structural spillage: an efficient method to identify non-crystalline topological materials
- Structure-driven phase transitions in paracrystalline topological insulators
- Topological insulating phase arising in transition metal dichalcogenide alloy
- Topological zero-modes of the spectral localizer of trivial metals
- Interacting Virtual Topological Phases in Defect-Rich 2D Materials
- Reentrant topological phase in half-Heusler compounds
- Coarse geometric approach to topological phases: Invariants from real-space representations