Interacting Virtual Topological Phases in Defect-Rich 2D Materials
arXiv:2412.08607 · doi:10.1103/PhysRevB.111.195135
Abstract
We investigate the robustness of {\it virtual} topological states -- topological phases away from the Fermi energy -- against the electron-electron interaction and band filling. As a case study, we employ a realistic model to investigate the properties of vacancy-driven topological phases in transition metal dichalcogenides (TMDs) and establish a connection between the degree of localization of topological wave functions, the vacancy density, and the electron-electron interaction strength with the topological phase robustness. We demonstrate that electron-electron interactions play a crucial role in degrading topological phases thereby determining the validity of single-particle approximations for topological insulator phases. Our findings can be naturally extended to {\it virtual} topological phases of a wide range of materials.
References in corpus (27)
- Topological Insulators
- Topological insulators and superconductors
- Quantum Spin Hall Effect in Graphene
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Topological Insulators in Three Dimensions
- Universal Intrinsic Spin-Hall Effect
- The (High Quality) Topological Materials In The World
- Catalogue of Topological Electronic Materials
- Towards ideal topological materials: Comprehensive database searches using symmetry indicators
- The space group classification of topological band insulators
- Topological classification of crystalline insulators through band structure combinatorics
- Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus
- Interacting topological insulators: a review
- Topological Insulators and Mott Physics from the Hubbard Interaction
- Correlation Effects in Quantum Spin-Hall Insulators: A Quantum Monte Carlo Study
- Intrinsically patterned two-dimensional materials for selective adsorption of molecules and nanoclusters
- All Topological Bands of All Nonmagnetic Stoichiometric Materials
- Self-consistent potential correction for charged periodic systems
- Temperature effects in the band structure of topological insulators
- Defect-induced large spin-orbit splitting in the monolayer of PtSe
- Amorphous BiSe structural, electronic, and topological nature by first-principles
- Tuning the topological states in metal-organic bilayers
- Phase transitions and scale invariance in topological Anderson insulators
- Vacancy localization effects on MX2 transition metal dichalcogenides: a systematic ab-initio study
- Temperature effects in topological insulators of transition metal dichalcogenide monolayers
- Structure-driven phase transitions in paracrystalline topological insulators
- Topological insulating phase arising in transition metal dichalcogenide alloy