Influence of strain on anisotropic thermoelectric transport of Bi${}_2$Te${}_3$ and Sb${}_2$Te${}_3$

Abstract

On the basis of detailed first-principles calculations and semi-classical Boltzmann transport, the anisotropic thermoelectric transport properties of Bi${}_2$Te${}_3$ and Sb${}_2$Te${}_3$ under strain were investigated. It was found that due to compensation effects of the strain dependent thermopower and electrical conductivity, the related powerfactor will decrease under applied in-plane strain for Bi${}_2$Te${}_3,whilebeingstableforSb$_2$Te$_3$.Aclearpreferenceforthermoelectrictransportunderhole-doping,aswellasforthein-planetransportdirectionwasfoundforbothtellurides.Incontrasttotheelectricalconductivityanisotropy,theanisotropyofthethermopowerwasalmostrobustunderappliedstrain.TheassumptionofananisotropicrelaxationtimeforBi$_2$Te$_3$ suggests, that already in the single crystalline system strong anisotropic scattering effects should play a role.

References in corpus (1)

• Effect of strain on the thermoelectric properties of silicon: An ab initio study

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