Breakdown of topological protection due to non-magnetic edge disorder in two-dimensional materials in the Quantum Spin Hall phase
arXiv:2210.03846 · doi:10.1103/PhysRevB.106.245408
Abstract
We study the suppression of the conductance quantization in quantum spin Hall systems by a combined effect of electronic interactions and edge disorder, that is ubiquitous in exfoliated and CVD grown 2D materials. We show that the interplay between the electronic localized states due to edge defects and electron-electron interactions gives rise to local magnetic moments, that break time-reversal symmetry and the topological protection of the edge states in 2D topological systems. Our results suggest that edge disorder leads to small deviations of a perfect quantized conductance in short samples and to a strong conductance suppression in long ones. Our analysis is based on on the Kane-Mele model, an unrestricted Hubbard mean field Hamiltonian and on a self-consistent recursive Green's functions technique to calculate the transport quantities.
arXiv comment6 pages, 3 figures
References in corpus (55)
- Topological Insulators
- Topological insulators and superconductors
- Quantum Spin Hall Effect in Graphene
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Half-Metallic Graphene Nanoribbons
- Emergence of magnetism in graphene materials and nanostructures
- Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm
- Nonlocal edge state transport in the quantum spin Hall state
- The missing atom as a source of carbon magnetism
- Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
- Spatially Resolving Spin-split Edge States of Chiral Graphene Nanoribbons
- Edge conduction in monolayer WTe2
- Strength of effective Coulomb interactions in graphene and graphite
- Topological Phases in Two-Dimensional Materials: A Brief Review
- Colloquium: Spintronics in graphene and other two-dimensional materials
- Observation of Quantum Spin Hall States in InAs/GaSb Bilayers under Broken Time-Reversal Symmetry
- Modeling disorder in graphene
- Conductance quantization and transport gap in disordered graphene nanoribbons
- Spin polarization of the quantum spin Hall edge states
- Spin currents in rough graphene nanoribbons: Universal fluctuations and spin injection
- Imaging currents in HgTe quantum wells in the quantum spin Hall regime
- The recursive Green's function method for graphene
- Helical edge resistance introduced by charge puddles
- Robust topological edge states at the perfect surface step edge of topological insulator ZrTe
- Experimentally Engineering the Edge Termination of Graphene Nanoribbons
- Direct experimental evidence of pi magnetism of a single atomic vacancy in graphene
- Edge Dynamics in a Quantum Spin Hall State: Effects from Rashba Spin-Orbit Interaction
- Transport in two-dimensional topological materials: recent developments in experiment and theory
- Edge Channel Transport in InAs/GaSb Topological Insulating Phase
- Phonon induced backscattering in helical edge states
- Transport in disordered two-dimensional topological insulator
- Electronic structure of the substitutional vacancy in graphene: Density-functional and Green's function studies
- Abundance of topological order in exfoliable two-dimensional insulators
- Probing variations of the Rashba spin-orbit coupling at the nanometer scale
- Vacancy in graphene: insight on magnetic properties from theoretical modeling
- Vacancy in graphene: insight on magnetic properties from theoretical modeling
- Nonmagnetic-Defect-Induced Magnetism in Graphene
- Spontaneous breakdown of topological protection in two dimensions
- Effects of nuclear spins on the transport properties of the edge of two-dimensional topological insulators
- Failure of conductance quantization in two-dimensional topological insulators due to non-magnetic impurities
- Electron density and transport in top-gated graphene nanoribbon devices: First-principles Green function algorithms for systems containing large number of atoms
- Evidence for a quantum-spin-Hall phase in graphene decorated with Bi2Te3 nanoparticles
- Noise-induced backscattering in a quantum-spin-Hall edge
- Helical Liquids in Semiconductors
- A partial fraction decomposition of the Fermi function
- Edge Disorder in Bottom-Up Zigzag Graphene Nanoribbons: Implications for Magnetism and Quantum Electronic Transport
- Disorder effects of vacancies on the electronic transport properties of realistic topological insulators nanoribbons: the case of bismuthene
- Graphene-based heterojunction between two topological insulators
- Coulomb charging energy of vacancy-induced states in graphene
- Nontrivial interplay of strong disorder and interactions in quantum spin-Hall insulators doped with dilute magnetic impurities
- Impact of complex adatom-induced interactions on quantum spin Hall phases
- An efficient method for computing the electronic transport properties of a multi-terminal system
- Disorder assisted transmission due to charge puddles in monolayer graphene: Transmission enhancement and local currents
- Local equilibrium charge and spin currents in two-dimensional topological systems
- Suppressing backscattering of helical edge modes with a spin bath