Quantum tunneling through planar p-n junctions in HgTe quantum wells

Abstract

We demonstrate that a p-n junction created electrically in HgTe quantum wells with inverted band-structure exhibits interesting intraband and interband tunneling processes. We find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p-n junction. The opacity and transparency of electrons through the p-n junction can be tuned by changing the incidence angle, the Fermi energy and the strength of the Rashba spin-orbit interaction. The occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional p-n junction can be switched on and off by tuning the gate voltage. The spin orientation can be substantially rotated when the samples exhibit a moderately strong Rashba spin-orbit interaction.

4 pages, 4 figures

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• Enhanced circular photogalvanic effect in HgTe quantum wells in the heavily inverted regime
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• Two distinct ballistic processes in graphene at Dirac point
• Tunable spin-polarized edge transport in inverted quantum-well junctions
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