Phase Diagrams of Bi1-xSbx Thin Films with Different Growth Orientations

Abstract

A closed-form model is developed to evaluate the band-edge shift caused by quantum confinement for a two-dimensional non-parabolic carrier-pocket. Based on this model, the symmetries and the band-shifts of different carrier-pockets are evaluated for BiSb thin films that are grown along different crystalline axes. The phase diagrams for the BiSb thin film systems with different growth orientations are calculated and analyzed.

References in corpus (1)

• Prediction of Anisotropic Single-Dirac-Cones in Bi${}_{1-x}$Sb${}_x$ Thin Films

Cited by in corpus (2)

• Surface band structure of ${\text{Bi}}_{1-x}{\text{Sb}}_x$(111)
• Systematic Study of Electronic Phases, Band Gaps and Band Overlaps of Bismuth Antimony Nanowires