Topological blocking at the Bi(111) surface due to surface relaxation
arXiv:2503.16819 · doi:10.1103/PhysRevB.111.L201303
Abstract
The topological characteristics of Bi and its alloys with Sb have fueled intense debate since the prediction of three-dimensional topological insulators. However, a definitive resolution has not been reached to date. Here, we provide theoretical evidence that surface relaxation conceals the underlying bulk topology of pure Bi. Using density functional theory calculations for thin Bi(111) films (up to 17 bilayers), we first demonstrate a substantial inter-bilayer expansion near the surface. Motivated by this finding, we extend our analysis to thick Bi(111) films (up to 250 bilayers) incorporating relaxation layers, within the framework of a relativistic empirical tight-binding model. Our results reveal that these relaxation layers topologically block the emergence of surface state and significantly suppress the one-particle spectrum of surface states, thereby obscuring the experimental identification of Bi's topological properties. This phenomenon, which we term "topological blocking", provides crucial insights into the long-standing difficulty of observing surface states of Bi(111) at the point. Furthermore, it establishes a framework for understanding and predicting the topological behavior in systems where surface relaxation disrupts the bulk-edge correspondence.
6 pages, 5 figures
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