activity
20132018
most citedTunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

170 citations · 451 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2018★ 22 cited

Influence of the ferroelectric polarization on the electronic structure of BaTiO3 thin films

N. Barrett, J. Rault, I. Krug +5

Micrometric domains of precise ferroelectric polarization have been written into a 20 nm thick epitaxial thin film of BaTiO3(001) (BTO) on a Nb doped SrTiO3 (STO) substrate using P…

cond-mat.mes-hall2017★ 149 cited

Hybrid Graphene/Silicon Schottky photodiode with intrinsic gating effect

Antonio Di Bartolomeo, Giuseppe Luongo, Filippo Giubileo +5

We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricat…

cond-mat.mes-hall2016★ 61 cited

Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays

Antonio Di Bartolomeo, Maurizio Passacantando, Gang Niu +4

We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use X-ray photoelectron spectroscopy to confirm a metallic b…

cond-mat.mes-hall2016★ 170 cited

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Antonio Di Bartolomeo, Filippo Giubileo, Giuseppe Luongo +7

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patte…

cond-mat.mtrl-sci2013★ 49 cited

Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias

J. E. Rault, G. Agnus, T. Maroutian +8

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The…