Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers

Abstract

A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic devices. In parallel, Hafnia based ferroelectrics are showing great potential for device miniaturization down to the nanoscale. Here we utilize ferroelectric Hf0.5Zr0.5O2 (HZO) with thickness of only 2 nm, epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a large band-gap insulating barrier integrated in MFTJs with cobalt top electrodes. As previously reported for other MFTJs with similar electrodes, the tunneling magnetoresistance (TMR) can be tuned and its sign can even be reversed by the bias voltage across the junction. We demonstrate four non-volatile resistance states generated by magnetic and electric field switching with high reproducibility in this system.

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Cited by in corpus (13)

• Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices
• High polarization, endurance and retention in sub-5 nm Hf${}_{0.5}$Zr${}_{0.5}$O${}_2$ films
• Epitaxial Ferroelectric La-doped Hf0.5Zr0.5O2 Thin Films
• Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films
• Polarization and resistive switching in epitaxial 2 nm Hf${}_{0.5}$Zr${}_{0.5}$O${}_2$ tunnel junctions
• Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices
• Trilinear coupling driven ferroelectricity in HfO${}_2$
• Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions
• Magneto-ionic control of spin polarization in magnetic tunnel junctions
• Recent advances, perspectives and challenges in ferroelectric synapses
• Stabilization of the epitaxial rhombohedral ferroelectric phase in ZrO2 by surface energy
• Electro-optic properties of ZrO2, HfO2 and LiNbO3 ferroelectric phases: A comprehensive and comparative study with density functional theory
• Investigating the Electromechanical Behavior of Unconventionally Ferroelectric $H{f}_{0.5}Z{r}_{0.5}{O}_2$-based Capacitors Through Operando Nanobeam X-ray Diffraction