High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Jike Lyu; Tingfeng Song; Ignasi Fina; Florencio Sánchez

doi:10.1039/d0nr02204g

paper

High polarization, endurance and retention in sub-5 nm Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ films

arXiv:2005.14477 · doi:10.1039/d0nr02204g

Abstract

Ferroelectric HfO $_{2}$ is a promising material for new memory devices, but significant improvement of important properties is necessary to reach applications. However, precedent literature shows that a dilemma between polarization, endurance and retention exists. Since all these properties should be simultaneously high, overcoming this issue is of the highest relevance. Here, we demonstrate that high crystalline quality sub-5 nm Hf0.5Zr0.5O2 capacitors, integrated epitaxially with Si(001), present combined high polarization (2Pr of 27 uC/cm2 in the pristine state), endurance (2Pr > 6 uC/cm2 after E11 cycles) and retention (2Pr > 12 uC/cm2 extrapolated at 10 years) using same poling conditions (2.5 V). This achievement is demonstrated in films thinner than 5 nm, thus opening bright possibilities in ferroelectric tunnel junctions and other devices.

Supporting Information available at https://pubs.rsc.org/en/content/articlehtml/2020/nr/d0nr02204g (paper published as open access)

High polarization, endurance and retention in sub-5 nm Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ films

Abstract

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High polarization, endurance and retention in sub-5 nm Hf0.5​Zr0.5​O2​ films

Abstract

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Cited by in corpus (5)

High polarization, endurance and retention in sub-5 nm Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ films