Epitaxial Ferroelectric La-doped Hf0.5Zr0.5O2 Thin Films

Abstract

Doping ferroelectric Hf0.5Zr0.5O2 with La is a promising route to improve endurance. However, the beneficial effect of La on the endurance of polycrystalline films may be accompanied by degradation of the retention. We have investigated the endurance - retention dilemma in La-doped epitaxial films. Compared to undoped epitaxial films, large values of polarization are obtained in a wider thickness range, whereas the coercive fields are similar, and the leakage current is substantially reduced. Compared to polycrystalline La-doped films, epitaxial La-doped films show more fatigue but there is not significant wake-up effect and endurance-retention dilemma. The persistent wake-up effect common to polycrystalline La-doped Hf0.5Zr0.5O2 films, is limited to a few cycles in epitaxial films. Despite fatigue, endurance in epitaxial La-doped films is more than 1010 cycles, and this good property is accompanied by excellent retention of more than 10 years. These results demonstrate that wake-up effect and endurance-retention dilemma are not intrinsic in La-doped Hf0.5Zr0.5O2.

References in corpus (8)

• High polarization, endurance and retention in sub-5 nm Hf${}_{0.5}$Zr${}_{0.5}$O${}_2$ films
• Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films
• Domain Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)
• Polarization Switching Dynamics Governed by Thermodynamic Nucleation Process in Ultrathin Ferroelectric Films
• Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates
• Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices
• Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance
• Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions

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• Disentangling stress and strain effects in ferroelectric HfO2
• Origin of Interstitial Doping Induced Coercive Field Reduction in Ferroelectric Hafnia
• Theoretical lower limit of coercive field in ferroelectric hafnia
• Molecular Beam Epitaxy Growth and Doping Modulation of Topological Semimetal NiTe${}_2$