Domain Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)

Abstract

Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the material and for prototyping emerging devices. Ferroelectric Hf0.5Zr0.5O2(111) films have been epitaxially stabilized on La2/3Sr1/3MnO3(001) electrodes. This epitaxy, considering the symmetry dissimilarity and the huge lattice mismatch, is not compatible with conventional mechanisms of epitaxy. To gain insight into the epitaxy mechanism, scanning transmission electron microscopy characterization of the interface was performed, revealing arrays of dislocations with short periodicities. These observed periodicities agree with the expected for domain matching epitaxy, indicating that this unconventional mechanism could be the prevailing factor in the stabilization of ferroelectric Hf0.5Zr0.5O2 with (111) orientation in the epitaxial Hf0.5Zr0.5O2(111)/La2/3Sr1/3MnO3(001) heterostructure.

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Cited by in corpus (14)

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• Epitaxial Ferroelectric La-doped Hf0.5Zr0.5O2 Thin Films
• Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films
• Progress in Computational Understanding of Ferroelectric Mechanisms in HfO${}_2$
• Trilinear coupling driven ferroelectricity in HfO${}_2$
• Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin Films
• Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films
• Disentangling stress and strain effects in ferroelectric HfO2
• Epitaxial ferroelectric hafnia stabilized by symmetry constraints
• Flexoelectricity-stabilized ferroelectric phase with enhanced reliability in ultrathin La:HfO2 films
• Finite-size effects on the ferroelectricity in rhombohedral HfO${}_2$
• Higher-order epitaxy: A pathway to suppressing structural instability and emergent superconductivity
• Sizes of Ferroelectricity Appearance and Disappearence in Nanosized Hafnia-Zirconia:Landau-type Theory