Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

Abstract

SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm, have very high remnant polarization of 34 uC/cm2. Hf0.5Zr0.5O2 capacitors at operating voltage of 4 V present long retention time well beyond 10 years and high endurance against fatigue up to 109 cycles. The robust ferroelectric properties displayed by the epitaxial Hf0.5Zr0.5O2 films on Si(001) using SrTiO3 templates paves the way for the monolithic integration on silicon of emerging memory devices based on epitaxial HfO2.

References in corpus (5)

• The Origin of Ferroelectricity in Hf${}_x$ Zr${}_{1-x}$ O${}_2$: A Computational Investigation and a Surface Energy Model
• Antiferroelectricity in thin film ZrO2 from first principles
• Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films
• Polarization Switching Dynamics Governed by Thermodynamic Nucleation Process in Ultrathin Ferroelectric Films
• Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

Cited by in corpus (9)

• Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices
• High polarization, endurance and retention in sub-5 nm Hf${}_{0.5}$Zr${}_{0.5}$O${}_2$ films
• Domain Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)
• Epitaxial Ferroelectric La-doped Hf0.5Zr0.5O2 Thin Films
• Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices
• Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions
• Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin Films
• Disentangling stress and strain effects in ferroelectric HfO2
• Flexoelectricity-stabilized ferroelectric phase with enhanced reliability in ultrathin La:HfO2 films