activity
20032021
most citedRoom-temperature antiferromagnetic memory resistor

707 citations · 4k across the 54 of their papers we have counts for

collaborators

55 papers

cond-mat.str-el2021

Orbital Occupancy and Hybridization in Strained SrVO Epitaxial Films

Mathieu Mirjolet, Hari Babu Vasili, Adrian Valadkhani +6

Oxygen packaging in transition metal oxides determines the metal-oxygen hybridization and electronic occupation at metal orbitals. Strontium vanadate (SrVO), having a single el…

physics.app-ph2021★ 68 cited

Polarization and resistive switching in epitaxial 2 nm HfZrO tunnel junctions

Milena Cervo Sulzbach, Huan Tan, Saul Estandia +4

In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafni…

cond-mat.str-el2021★ 42 cited

Electron-Phonon Coupling and Electron-Phonon Scattering in SrVO

Mathieu Mirjolet, Francisco Rivadulla, Premysl Marsik +3

Understanding the physics of strongly correlated electronic systems has been a central issue in condensed matter physics for decades. In transition metal oxides, strong correlation…

cond-mat.mtrl-sci2021

Flexible antiferromagnetic FeRh tapes as memory elements

Ignasi Fina, Nico Dix, Enric Menéndez +5

The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and…

cond-mat.mtrl-sci2020★ 65 cited

Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions

Milena Cervo Sulzbach, Saúl Estandía, Xiao Long +7

Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can b…

cond-mat.mtrl-sci2020★ 67 cited

Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices

Milena Cervo Sulzbach, Saúl Estandía, Jaume Gàzquez +3

Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallite…