activity
20032021
most citedRoom-temperature antiferromagnetic memory resistor

707 citations · 4k across the 54 of their papers we have counts for

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Showing 2019Show all

5 papers · 1 filter

cond-mat.mtrl-sci2019★ 22 cited

Strain and voltage control of magnetic and electric properties of FeRh films

Ignasi Fina, Josep Fontcuberta

FeRh based alloys may display an uncommon transition from a ferromagnetic to an antiferromagnetic state upon cooling. The transition takes place roughly above room temperature and…

cond-mat.mtrl-sci2019★ 205 cited

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Saul Estandia, Nico Dix, Jaume Gazquez +5

The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 el…

physics.app-ph2019★ 86 cited

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

J. Lyu, I. Fina, R. Bachelet +5

SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced p…

cond-mat.mtrl-sci2019★ 128 cited

Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films

Jike Lyu, Ignasi Fina, Raul Solanas +2

The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown…

physics.app-ph2019★ 66 cited

Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

Jike Lyu, Ignasi Fina, Josep Fontcuberta +1

Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane orie…