activity
20042023
most citedEpitaxial Ferroelectric La-doped Hf0.5Zr0.5O2 Thin Films

86 citations · 213 across the 7 of their papers we have counts for

collaborators

7 papers

physics.app-ph2023

A simple method for programming and analyzing multilevel crystallization states in phase-change materials thin film

Arnaud Taute, Sadek Al-Jibouri, Capucine Laprais +8

We propose and demonstrate a simple method to accurately monitor and program arbitrary states of partial crystallization in phase-change materials (PCMs). The method relies both on…

cond-mat.mtrl-sci2021★ 10 cited

Giant Tuning of Electronic and Thermoelectric Properties by Epitaxial Strain in p-Type Sr-Doped LaCrO3 Transparent Thin Films

D. Han, R. Moalla, I. Fina +8

The impact of epitaxial strain on the structural, electronic, and thermoelectric properties of p-type transparent Sr-doped LaCrO3 thin films has been investigated. For this purpose…

cond-mat.mtrl-sci2020★ 86 cited

Epitaxial Ferroelectric La-doped Hf0.5Zr0.5O2 Thin Films

Tingfeng Song, Romain Bachelet, Guillaume Saint-Girons +3

Doping ferroelectric Hf0.5Zr0.5O2 with La is a promising route to improve endurance. However, the beneficial effect of La on the endurance of polycrystalline films may be accompani…

physics.app-ph2019★ 86 cited

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

J. Lyu, I. Fina, R. Bachelet +5

SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced p…

cond-mat.mtrl-sci2017★ 19 cited

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nanometer to micrometer and mosaicity effects

M. Apreutesei, R. Debord, M. Bouras +9

High-quality thermoelectric LaxSr1-xTiO3 (LSTO) layers (here with x = 0.2), with thicknesses ranging from 20 nm to 700 nm, have been epitaxially grown on SrTiO3(001) substrates by…

cond-mat.mtrl-sci2004★ 4 cited

Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks

Jose Coelho, Gilles Patriarche, Frank Glas +2

We account for lateral orderings of III-V nanostructures resulting from a GaAs/InAs/InGaAs/GaAs sequence grown on GaAs by metallorganic vapour phase epitaxy at two different temper…