707 citations · 3.1k across the 35 of their papers we have counts for
37 papers
Computing at the Edge Enabled by Indoor Photovoltaics and Ferroelectrics
Robert L. Z. Hoye, Markus Hellenbrand, Nuno Estrócio +17
The exponential, pervasive rise of artificial intelligence (AI), hosted in large data centres, will test the limits of the underpinning infrastructure, including electricity and wa…
Carbon magneto-ionics: Control of magnetism through voltage-driven carbon transport
Zhengwei Tan, Zheng Ma, Simone Privitera +15
Control of magnetism through voltage-driven ionic processes (i.e., magneto-ionics) holds potential for next-generation memories and computing. This stems from its non-volatility, f…
Switching dynamics and improved efficiency of free-standing antiferroelectric capacitors
Umair Saeed, David Pesquera, Ying Liu +7
We report the switching dynamics of antiferroelectric Lead Zirconate (PbZrO3) free standing capacitors compared to their epitaxial counterparts. Frequency dependence of hysteresis…
Disentangling stress and strain effects in ferroelectric HfO2
Tingfeng Song, Veniero Lenzi, José P. B. Silva +3
Ferroelectric HfO2 films are usually polycrystalline and contain a mixture of polar and nonpolar phases. This challenges the understanding and control of polar phase stabilization…
Giant Tuning of Electronic and Thermoelectric Properties by Epitaxial Strain in p-Type Sr-Doped LaCrO3 Transparent Thin Films
D. Han, R. Moalla, I. Fina +8
The impact of epitaxial strain on the structural, electronic, and thermoelectric properties of p-type transparent Sr-doped LaCrO3 thin films has been investigated. For this purpose…
Polarization and resistive switching in epitaxial 2 nm HfZrO tunnel junctions
Milena Cervo Sulzbach, Huan Tan, Saul Estandia +4
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafni…
Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices
Ignasi Fina, Florencio Sanchez
About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films, there is tremendous interest in this material and ferroelectric oxides are once again…
Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin Films
Saul Estandia, Jaume Gazquez, Maria Varela +5
Epitaxial orthorhombic Hf0.5Zr0.5O2 (HZO) films on La0.67Sr0.33MnO3 (LSMO) electrodes show robust ferroelectricity, with high polarization, endurance and retention. However, no sim…
Flexible antiferromagnetic FeRh tapes as memory elements
Ignasi Fina, Nico Dix, Enric Menéndez +5
The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and…
Epitaxial Ferroelectric La-doped Hf0.5Zr0.5O2 Thin Films
Tingfeng Song, Romain Bachelet, Guillaume Saint-Girons +3
Doping ferroelectric Hf0.5Zr0.5O2 with La is a promising route to improve endurance. However, the beneficial effect of La on the endurance of polycrystalline films may be accompani…
Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films
Jike Lyu, Ignasi Fina, Florencio Sanchez
The growth window of epitaxial Hf0.5Zr0.5O2 is established taking into account the main ferroelectric properties that films have to present simultaneously: high remanent polarizati…
Discovery of highly-polarizable semiconductors BaZrS3 and Ba3Zr2S7
Stephen Filippone, Boyang Zhao, Shanyuan Niu +6
There are few known semiconductors exhibiting both strong optical response and large dielectric polarizability. Inorganic materials with large dielectric polarizability tend to be…
Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions
Milena Cervo Sulzbach, Saúl Estandía, Xiao Long +7
Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can b…
Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices
Milena Cervo Sulzbach, Saúl Estandía, Jaume Gàzquez +3
Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallite…
Domain Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)
Saul Estandía, Nico Dix, Matthew F. Chisholm +2
Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the material and for prototyping emerging devices. Ferroelectric Hf0.5Zr0.5O2(111) f…
Reversible and magnetically unassisted voltage-driven switching of magnetization in FeRh/PMN-PT
Ignasi Fina, Alberto Quintana, Xavier Martí +5
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic…
Strain and voltage control of magnetic and electric properties of FeRh films
Ignasi Fina, Josep Fontcuberta
FeRh based alloys may display an uncommon transition from a ferromagnetic to an antiferromagnetic state upon cooling. The transition takes place roughly above room temperature and…
Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
Saul Estandia, Nico Dix, Jaume Gazquez +5
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 el…
Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates
J. Lyu, I. Fina, R. Bachelet +5
SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced p…
Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films
Jike Lyu, Ignasi Fina, Raul Solanas +2
The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown…
Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance
Jike Lyu, Ignasi Fina, Josep Fontcuberta +1
Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane orie…
Tailoring Lattice Strain and Ferroelectric Polarization of Epitaxial BaTiO3 Thin Films on Si(001)
Jike Lyu, Ignasi Fina, Raul Solanas +2
Ferroelectric BaTiO3 films with large polarization have been integrated with Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate…
Photoferroelectric oxides
I. Fina, C. Paillard, B. Dkhil
Giant photovoltaic effect due to bulk photovoltaic effect observed in multiferroic BiFeO3 thin films has triggered a renewed interest on photoferroelectric materials for photovolta…
Spintronic Functionalities in Multiferroic Oxide-based Heterostructures
I. Fina, X. Martí
The list of materials systems displaying both electric and magnetic long range order is short. Oxides, however, concentrate numerous examples of multiferroicity with, in some cases…