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I. Fina

37 papers hereh-index 406.4k citations167 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author6
  • middle author27

Across the 33 of 37 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci33
  • physics.app-ph3
  • cond-mat.mes-hall1

identity via Semantic Scholar / OpenAlex

activity
20102026
most citedRoom-temperature antiferromagnetic memory resistor

707 citations · 3.1k across the 35 of their papers we have counts for

collaborators
Showing physics.app-phShow all

3 papers · 1 filter

physics.app-ph2021★ 68 cited

Polarization and resistive switching in epitaxial 2 nm Hf0.5​Zr0.5​O2​ tunnel junctions

Milena Cervo Sulzbach, Huan Tan, Saul Estandia +4

In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafni…

physics.app-ph2019★ 86 cited

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

J. Lyu, I. Fina, R. Bachelet +5

SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced p…

physics.app-ph2019★ 66 cited

Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

Jike Lyu, Ignasi Fina, Josep Fontcuberta +1

Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane orie…

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