Switching dynamics and improved efficiency of free-standing antiferroelectric capacitors

Abstract

We report the switching dynamics of antiferroelectric Lead Zirconate (PbZrO3) free standing capacitors compared to their epitaxial counterparts. Frequency dependence of hysteresis indicates that freestanding capacitors exhibit a lower dispersion of switching fields, lower residual polarization, and faster switching response as compared to epitaxially-clamped capacitors. As a consequence, freestanding capacitor membranes exhibit better energy storage density and efficiency.

27 pages, 7 Figures, Supplementary material

References in corpus (2)

• Translational boundaries as incipient ferrielectric domains in antiferroelectric PbZrO3
• Finite-dimensional signature of spinodal instability in an athermal hysteretic transition

Cited by in corpus (2)

• Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films
• Beware of the water: Hidden hydrogenation of perovskite membranes made by the water-soluble sacrificial layer method