Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films

Abstract

The growth window of epitaxial Hf0.5Zr0.5O2 is established taking into account the main ferroelectric properties that films have to present simultaneously: high remanent polarization, low fatigue and long retention. Defects in the film and imprint field depend on deposition temperature and oxygen pressure, with an impact on fatigue and retention, respectively. Fatigue increases with substrate temperature and pressure, and retention is short if low temperature is used. The growth window of epitaxial stabilization of ferroelectric Hf0.5Zr0.5O2 is narrower when all major ferroelectric properties (remanence, endurance and retention) are considered, but deposition temperature and pressure ranges are still sufficiently wide.

References in corpus (7)

• High polarization, endurance and retention in sub-5 nm Hf${}_{0.5}$Zr${}_{0.5}$O${}_2$ films
• Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films
• Domain Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)
• Polarization Switching Dynamics Governed by Thermodynamic Nucleation Process in Ultrathin Ferroelectric Films
• Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices
• Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance
• Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions

Cited by in corpus (1)

• Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices