128 citations · 430 across the 6 of their papers we have counts for
7 papers
Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films
Jike Lyu, Ignasi Fina, Florencio Sanchez
The growth window of epitaxial Hf0.5Zr0.5O2 is established taking into account the main ferroelectric properties that films have to present simultaneously: high remanent polarizati…
Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions
Milena Cervo Sulzbach, Saúl Estandía, Xiao Long +7
Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can b…
Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
Saul Estandia, Nico Dix, Jaume Gazquez +5
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 el…
Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates
J. Lyu, I. Fina, R. Bachelet +5
SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced p…
Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films
Jike Lyu, Ignasi Fina, Raul Solanas +2
The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown…
Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance
Jike Lyu, Ignasi Fina, Josep Fontcuberta +1
Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane orie…