205 citations · 640 across the 8 of their papers we have counts for
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cond-mat.mtrl-sci2020★ 35 cited
Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films
Jike Lyu, Ignasi Fina, Florencio Sanchez
The growth window of epitaxial Hf0.5Zr0.5O2 is established taking into account the main ferroelectric properties that films have to present simultaneously: high remanent polarizati…
cond-mat.mtrl-sci2020★ 65 cited
Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions
Milena Cervo Sulzbach, Saúl Estandía, Xiao Long +7
Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can b…