activity
20182020
most citedGrowth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films

128 citations · 430 across the 6 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci202035 cited

Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films

Jike Lyu, Ignasi Fina, Florencio Sanchez

The growth window of epitaxial Hf0.5Zr0.5O2 is established taking into account the main ferroelectric properties that films have to present simultaneously: high remanent polarizati…

cond-mat.mtrl-sci202065 cited

Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions

Milena Cervo Sulzbach, Saúl Estandía, Xiao Long +7

Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can b…

cond-mat.mtrl-sci2019

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Saul Estandia, Nico Dix, Jaume Gazquez +5

The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 el…

cond-mat.mtrl-sci2019128 cited

Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films

Jike Lyu, Ignasi Fina, Raul Solanas +2

The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown…

cond-mat.mtrl-sci201850 cited

Tailoring Lattice Strain and Ferroelectric Polarization of Epitaxial BaTiO3 Thin Films on Si(001)

Jike Lyu, Ignasi Fina, Raul Solanas +2

Ferroelectric BaTiO3 films with large polarization have been integrated with Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate…