203 citations · 345 across the 3 of their papers we have counts for
3 papers
physics.app-ph2020★ 133 cited
High polarization, endurance and retention in sub-5 nm HfZrO films
Jike Lyu, Tingfeng Song, Ignasi Fina +1
Ferroelectric HfO is a promising material for new memory devices, but significant improvement of important properties is necessary to reach applications. However, precedent lit…
cond-mat.mtrl-sci2016★ 9 cited
Electric control of antiferromagnets
I. Fina, X. Marti
In the past five years, most of the paradigmatic concepts employed in spintronics have been replicated substituting ferromagnets by antiferromagnets in critical parts of the device…
cond-mat.mtrl-sci2014★ 203 cited
Multiferroic Iron Oxide Thin Films at Room-Temperature
Marti Gich, Ignasi Fina, Alessio Morelli +5
In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orde…