High polarization, endurance and retention in sub-5 nm Hf${}_{0.5}$Zr${}_{0.5}$O${}_2$ films

Jike Lyu, Tingfeng Song, Ignasi Fina +1

Ferroelectric HfO${}_2$ is a promising material for new memory devices, but significant improvement of important properties is necessary to reach applications. However, precedent lit…