activity
20082023
most citedTwo Dimensional Ising Superconductivity in Gated MoS

933 citations · 2.3k across the 13 of their papers we have counts for

collaborators

13 papers

physics.optics2023★ 1 cited

Structural colors and enhanced resolution at the nanoscale: Local structuring of phase-change materials using focused ion beam

Daniel T. Yimam, Minpeng Liang, Jianting Ye +1

In the past few years, phase-change materials have become increasingly important in nano-photonics and optoelectronics. The advantages of sizeable optical contrast between phases a…

cond-mat.supr-con2022★ 101 cited

Orbital Fulde-Ferrell-Larkin-Ovchinnikov state in an Ising superconductor

Puhua Wan, Oleksandr Zheliuk, Noah F. Q. Yuan +8

The conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state relies on the Zeeman effect of an external magnetic field to break time-reversal symmetry, forming a state of finite-…

cond-mat.supr-con2021

Dual Universality and Unconventional Phase Diagram of a Clean 2D Superconductor with Tunable Disorders

Puhua Wan, Qihong Chen, Oleksandr Zheliuk +4

Weakly disordered two-dimensional (2D) superconductors can host richer quantum phase transitions than their highly-disordered counterparts. This is due to the insertion of a metall…

cond-mat.mtrl-sci2019★ 4 cited

Band-edge Exciton Fine Structure and Exciton Recombination Dynamics in Single crystals of Layered Hybrid Perovskites

Hong-Hua Fang, Jie Yang, Sampson Adjokatse +6

Two-dimensional (2D) perovskite materials have recently re-attracted intense research interest for applications in photovoltaics and optoelectronics. As a consequence of the dielec…

physics.app-ph2019★ 56 cited

Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers

Yingfen Wei, Sylvia Matzen, Guillaume Agnus +7

A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic device…

cond-mat.mes-hall2018★ 25 cited

Possible charge-density-wave signatures in the anomalous resistivity of Li-intercalated multilayer MoS2

Erik Piatti, Qihong Chen, Mauro Tortello +2

We fabricate ion-gated field-effect transistors (iFET) on mechanically exfoliated multilayer MoS. We encapsulate the flake by AlO, leaving the device channel exposed at…