Strong dopant dependence of electric transport in ion-gated MoS2

Abstract

We report modifications of the temperature-dependent transport properties of $\mathrm{Mo}{\mathrm{S}}_2$ thin flakes via field-driven ion intercalation in an electric double layer transistor. We find that intercalation with $\mathrm{L}{\mathrm{i}}^{+}$ ions induces the onset of an inhomogeneous superconducting state. Intercalation with ${\mathrm{K}}^{+}$ leads instead to a disorder-induced incipient metal-to-insulator transition. These findings suggest that similar ionic species can provide access to different electronic phases in the same material.

5 pages, 3 figures

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Cited by in corpus (15)

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• Lithium ion intercalation in thin crystals of hexagonal TaSe2 gated by a polymer electrolyte
• Towards the insulator-to-metal transition at the surface of ion-gated nanocrystalline diamond films
• Ambipolar suppression of superconductivity by ionic gating in optimally-doped BaFe2(As,P)2 ultrathin films
• Ionic gating in metallic superconductors: A brief review
• Anomalous screening of an electrostatic field at the surface of niobium nitride
• Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films
• Two-dimensional hole transport in ion-gated diamond surfaces: A brief review
• Superconducting nanoribbon with a constriction: A quantum-confined Josephson junction
• Anomalous metallic phase in molybdenum disulphide induced via gate-driven organic ion intercalation
• Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels
• Migdal-Eliashberg theory of multi-band high-temperature superconductivity in field-effect-doped hydrogenated (111) diamond
• Reversible Tuning of Superconductivity in Ion-Gated NbN Ultrathin Films by Self-Encapsulation with a High-$\kappa$ Dielectric Layer